DRAM is trading around 61.29 after a strong recovery from the 45.57–52.92 support area. On the daily chart, price spent several weeks building an accumulation range between roughly 53 and 66, and the recent move back above 59.80 keeps the bullish structure active.
The first major resistance is 66.14, followed by 70.93. A confirmed breakout above 70.93 would open the way toward 78.85–82.07, with the larger Fibonacci targets at 99.43, 118.10 and 129.23. On the downside, 59.80 is the first level that needs to hold, while 52.92 is the key structural support; a deeper breakdown would bring 45.57 back into focus.
The CCI has recovered from deeply negative territory and is holding in positive territory, supporting the current recovery, although momentum is not yet at an extreme level.
Fundamentally, the memory market remains closely tied to the AI infrastructure cycle. The Roundhill Memory ETF is specifically designed to provide exposure to companies involved in DRAM, NAND and HBM, with Samsung Electronics, SK hynix and Micron among its largest exposures. The supply-demand backdrop remains important: Samsung said this week that HBM could account for nearly 30% of global DRAM wafer capacity next year, up from around 20% currently, because HBM and conventional DRAM compete for the same wafer capacity. This creates a potential constraint on standard DRAM supply while AI-related HBM demand continues to expand. Micron is also reporting its fiscal fourth-quarter results today, September 30, making the company's outlook on DRAM, NAND, HBM demand and pricing an important near-term catalyst for the memory sector.
The main technical structure on the chart is therefore a large accumulation after the previous decline, with 66.14–70.93 acting as the key breakout zone. If price breaks and holds above this area, the next technical levels are 78.85–82.07 and then 99.43. If the breakout fails, the market can remain inside the accumulation range and retest 59.80 or 52.92 before attempting another move higher.
The first major resistance is 66.14, followed by 70.93. A confirmed breakout above 70.93 would open the way toward 78.85–82.07, with the larger Fibonacci targets at 99.43, 118.10 and 129.23. On the downside, 59.80 is the first level that needs to hold, while 52.92 is the key structural support; a deeper breakdown would bring 45.57 back into focus.
The CCI has recovered from deeply negative territory and is holding in positive territory, supporting the current recovery, although momentum is not yet at an extreme level.
Fundamentally, the memory market remains closely tied to the AI infrastructure cycle. The Roundhill Memory ETF is specifically designed to provide exposure to companies involved in DRAM, NAND and HBM, with Samsung Electronics, SK hynix and Micron among its largest exposures. The supply-demand backdrop remains important: Samsung said this week that HBM could account for nearly 30% of global DRAM wafer capacity next year, up from around 20% currently, because HBM and conventional DRAM compete for the same wafer capacity. This creates a potential constraint on standard DRAM supply while AI-related HBM demand continues to expand. Micron is also reporting its fiscal fourth-quarter results today, September 30, making the company's outlook on DRAM, NAND, HBM demand and pricing an important near-term catalyst for the memory sector.
The main technical structure on the chart is therefore a large accumulation after the previous decline, with 66.14–70.93 acting as the key breakout zone. If price breaks and holds above this area, the next technical levels are 78.85–82.07 and then 99.43. If the breakout fails, the market can remain inside the accumulation range and retest 59.80 or 52.92 before attempting another move higher.
Feragatname
Bilgiler ve yayınlar, TradingView tarafından sağlanan veya onaylanan finansal, yatırım, alım satım veya diğer türden tavsiye veya öneriler anlamına gelmez ve teşkil etmez. Kullanım Koşulları bölümünde daha fazlasını okuyun.
Feragatname
Bilgiler ve yayınlar, TradingView tarafından sağlanan veya onaylanan finansal, yatırım, alım satım veya diğer türden tavsiye veya öneriler anlamına gelmez ve teşkil etmez. Kullanım Koşulları bölümünde daha fazlasını okuyun.